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december 2007 rev 3 1/15 15 stp9nk65z stp9nk65zfp n-channel 650 v - 1 ? - 6.4 a to-220 / to-220fp zener-protected supermesh? power mosfet features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufact uring repeatability application switching applications description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets including revolutionary mdmesh? products. figure 1. internal schematic diagram type v dss r ds(on) i d pw stp9nk65zfp 650 v < 1.2 ? 6.4 a 125 w stp9nk65z 650 v < 1.2 ? 6.4 a 30 w 1 2 3 1 2 3 to-220 to-220fp table 1. device summary order codes marking package packaging stp9nk65zfp p9nk65zfp to-220fp tube stp9nk65z p9nk65z to-220 tube www.st.com
contents stp9nk65z - stp9nk65zfp 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
stp9nk65z - stp9nk65z fp electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp v ds drain-source voltage (v gs = 0) 650 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 6.4 6.4 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 4 4 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 25.6 25.6 (1) a p tot total dissipation at t c = 25 c 125 30 w derating factor 1 0.24 w/c v esd(g-s) gate source esd(hbm-c=100 pf, r=1.5 k ?) 4000 v dv/dt (3) 3. i sd 6.4 a, di/dt 200 a/s, v dd 80%v (br)dss peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c table 3. thermal data symbol parameter value unit to-220 to-220fp rthj-case thermal resistance junction-case max 1 4.2 c/w rthj-amb thermal resistance ju nction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 6.4 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50 v) 200 mj
electrical characteristics stp9nk65z - stp9nk65zfp 4/15 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.2 a 1 1.2 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15 v , i d = 3.2 a 6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 1145 130 28 pf pf pf c oss eq (2) . 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 400 v 55 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 6.4 a, v gs = 10 v (see figure 18 ) 41 7.5 22 nc nc nc
stp9nk65z - stp9nk65zfp electrical characteristics 5/15 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 325 v, i d = 3.2 a r g =4.7 ? v gs = 10 v (see figure 17 ) 20 12 ns ns t d(off) t f turn-off delay time fall time v dd = 325 v, i d = 3.2 a r g =4.7 ? v gs = 10 v (see figure 17 ) 45 15 ns ns table 8. source drain diode symbol parameter test cond itions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 6.4 25.6 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 6.4 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.4 a, di/dt = 100 a/s v dd = 50 v, t j = 150 c (see figure 19 ) 400 2600 13 ns nc a table 9. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have spec ifically been designed to enhance not only the device?s esd capability, but also to make them safely absor b possible voltage transients that may occasionally be applied from gate to source. in this respect the z ener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s in tegrity. these integrated zener diodes thus avoid the usage of external components. gate-source breakdown voltage igs=1 ma (open drain) 30 v
electrical characteristics stp9nk65z - stp9nk65zfp 6/15 2.1 electrical characteri stics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics
stp9nk65z - stp9nk65zfp electrical characteristics 7/15 figure 8. transconductance figure 9. static drain-source on resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature
electrical characteristics stp9nk65z - stp9nk65zfp 8/15 figure 14. source-drain diode forward characteristics figure 15. normalized bv dss vs temperature figure 16. maximum avalanche energy vs temperature
stp9nk65z - stp9nk 65zfp test circuits 9/15 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive wavefo rm figure 22. switching time waveform
package mechanical data stp9nk65z - stp9nk65zfp 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stp9nk65z - stp9nk65zfp package mechanical data 11/15 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stp9nk65z - stp9nk65zfp 12/15 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp9nk65z - stp9nk65zfp package mechanical data 13/15 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.009 0.106 c 1 1.4 0.039 0.055 d 2.4 2.75 0.094 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.029 0.039 f1 1.15 1.7 0.045 0.066 g 4.68 5.48 0.184 0.215 g1 2.24 2.84 0.088 0.111 h 10 10.4 0.393 0.409 l1 18.4 19.2 0.724 0.755 l2 16 0.629 l4 15.3 16.1 0.602 0.633 l5 3.4 0.133 l6 15.9 16.4 0.625 0.665 l7 9 9.3 0.354 0.366 l8 22.5 23.6 0.885 0.929 m 4.6 5.4 0.181 0.212 n2.29 3.290.090 0.129 dia 3 3.2 r0.5 0.019 to-220fp(040y) mechanical data
revision history stp9nk65z - stp9nk65zfp 14/15 5 revision history table 10. document revision history date revision changes 11-sep-2006 2 complete version 19-dec-2007 3 the document has been reformatted
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